Atomic layer deposition system Ultratech/CambridgeNanoTech Fiji 200 (ALD)

Marek Eliáš, Ph.D.

Instrument status:
Operational Operational, 20.7.2021 12:53

Equipment placement:
CEITEC Nano - C1.34

Atomic Layer Deposition is a deposition technique for very thin layers with the thickness control down to a single atomic layer. It belongs to the CVD techniques family. The thickness precision is achieved by pulsed deposition, where first a metal-containing precursor is introduced into the chamber and after a short time (allowing for monolayer adsorption) the chamber is pumped down. The following step is exposure to the oxidizing precursor (for oxides) or nitrogen-containing precursor (for nitrides). Thus, a monolayer of the target material is grown. The metal-containing precursors are usually organometallic ones, for oxidation a water or oxygen plasma can be used, nitridation is done using nitrogen plasma. To achieve the deposition in the ALD mode, the sample is heated up to a certain temperature, for most processes being in the range from 150 to 300 °C.


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thermal or plasma enhanced deposition 
ICP 13.56 MHz max. power 300 W
substrate temperaturefrom RT to 350 °C
sample size up to 8"
4 precursor lines
load lock
gases:Ar,O2, N2,H2
expo mode for homogenous deposition on high-aspect-ratio nanostructures
Processesdeposition of  Al2O3, HfO2, TiO2, SiO2, TiN, AlN, La2O3,


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