Deep reactive ion etching of Si-based materials Oxford Instruments Plasma Technology PlasmaPro 100 (DRIE)
Guarantor:
Marek Eliáš, Ph.D.
Instrument status:
Operational, 13.5.2026 23:39
Equipment placement:
CEITEC Nano - C1.34
Deep reactive-ion etching (DRIE) is a highly anisotropic etch process used to create deep, steep-sided holes and trenches in wafers/substrates, typically with high aspect ratios. It was developed for microelectromechanical systems (MEMS), which require these features, and is also used to excavate trenches for high-density capacitors in DRAM and, more recently, to create through-silicon vias (TSVs) in advanced 3D wafer-level packaging technology.
There are two main technologies for high-rate DRIE: cryogenic and Bosch, although the Bosch process is the only recognized production technique. Both Bosch and cryo processes can fabricate 90° (truly vertical) walls, but often the walls are slightly tapered, e.g., 88° („reentrant“) or 92° („retrograde“).
Another mechanism is sidewall passivation: SiOxFy functional groups (formed by sulfur hexafluoride and oxygen etch gases) condense on the sidewalls, protecting them from lateral etching. By combining these processes, deep vertical structures can be formed.
Publications:
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Brodský, J.; Liu, X.; Jarušek, J.; Migliaccio, L.; Neužil, P.; Zítka, O.; Gablech, I., 2025: . SENSORS AND ACTUATORS A: PHYSICAL 392, p. 1 - 6, doi: 10.1016/j.sna.2025.116719; FULL TEXT
(SUSS-MA8, RIE-FLUORINE, DRIE) -
Liu, X.; Brodský, J.; Vírostko, J.; Jarušek, J.; Migliaccio, L.; Zítka, O.; Gablech, I.; Neužil, P., 2025: . SCIENTIFIC REPORTS 15(1), doi: 10.1038/s41598-025-24442-5; FULL TEXT
(DRIE, SUSS-MA8, RIE-FLUORINE) -
Liu, X.; Fohlerová, Z.; Gablech, I.; Pumera, M.; Neužil, P., 2024: . APPLIED MATERIALS TODAY 37, doi: 10.1016/j.apmt.2024.102117; FULL TEXT
(RIE-FLUORINE, DRIE, PARYLENE-SCS, XEF2) -
Koňařík, L., 2024: . BACHELOR'S THESIS , p. 1 - 46; FULL TEXT
(LASER-DICER, DWL, EVAPORATOR, RIE-FLUORINE, DRIE, NANOCALC, DEKTAK, WIRE-BONDER, LYRA) -
CHMELÍKOVÁ, L.; FECKO, P.; CHMELÍK, J.; SKÁCEL, J.; OTÁHAL, A.; FOHLEROVÁ, Z., 2023: . APPLIED MATERIALS TODAY , p. 1 - 12, doi: 10.1016/j.apmt.2023.101736; FULL TEXT
(DRIE, PARYLENE-SCS, SUSS-MA8, XEF2)
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Mahel, V., 2023: . MASTER'S THESIS ; FULL TEXT
(DWL, DRIE, DEKTAK, DIENER, WIRE-BONDER) -
GABLECH, I.; BRODSKÝ, J.; VYROUBAL, P.; PIASTEK, J.; BARTOŠÍK, M.; PEKÁREK, J., 2022: . JOURNAL OF MATERIALS SCIENCE 57(3), p. 1923 - 13, doi: 10.1007/s10853-021-06846-6; FULL TEXT
(RIE-FLUORINE, DRIE, EVAPORATOR, WIRE-BONDER, WITEC-RAMAN, MPS150, KEITHLEY-4200, SUSS-MA8, DWL) -
Ondříšková, M., 2022: . BACHELOR'S THESIS , p. 1 - 56; FULL TEXT
(VERIOS, DRIE, KRATOS-XPS) -
Brodský J., 2021: . MASTER'S THESIS , p. 1 - 84; FULL TEXT
(DWL, DIENER, SUSS-RCD8, SUSS-MA8, EVAPORATOR, MPS150, WITEC-RAMAN, RIE-FLUORINE, DRIE, LYRA, ICON-SPM) -
LIU, X.; FECKO, P.; FOHLEROVÁ, Z.; PEKÁREK, J.; KARÁSEK, T.; NEUŽIL, P., 2020: . JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 38(6), p. 38 - 6, doi: 10.1116/6.0000558; FULL TEXT
(SUSS-MA8, SUSS-RCD8, DWL, DRIE, RIE-FLUORINE, PARYLENE-SCS, XEF2, APCVD, LYRA) -
GABLECH, I.; KLEMPA, J.; PEKÁREK, J.; VYROUBAL, P.; HRABINA, J.; HOLÁ, M.; KUNZ, J.; BRODSKÝ, J.; NEUŽIL, P., 2020: . MICROMACHINES 11(2), p. 1 - 10, doi: 10.3390/mi11020143; FULL TEXT
(DRIE, RIE-CHLORINE, WIRE-BONDER, KAUFMAN) -
Brodský, J., 2019: . BACHELOR'S THESIS , p. 1 - 50
(MPS150, WITEC-RAMAN, EVAPORATOR, DRIE, PECVD, DWL, SUSS-MA8, RIE-FLUORINE, RIE-CHLORINE, DIENER, SCIA) -
Fecko, P., 2019: . MASTER'S THESIS , p. 1 - 52
(SUSS-RCD8, SUSS-MA8, DWL, DRIE, ALD-FIJI, RIE-FLUORINE, PARYLENE-SCS, XEF2, LYRA, ICON-SPM) -
PRÁŠEK, J.; HOUŠKA, D.; HRDÝ, R.; HUBÁLEK, J.; SCHMID, U., 2019: . INTERNATIONAL SPRING SEMINAR ON ELECTRONICS TECHNOLOGY ISSE , p. 1 - 6, doi: 10.1109/ISSE.2019.8810293; FULL TEXT
(DRIE, SUSS-MA8, SUSS-RCD8, EVAPORATOR, DWL, ICON-SPM) -
GABLECH, I.; KLEMPA, J.; PEKÁREK, J.; VYROUBAL, P.; KUNZ, J.; NEUŽIL, P., 2019: . 2019 19TH INTERNATIONAL CONFERENCE ON MICRO AND NANOTECHNOLOGY FOR POWER GENERATION AND ENERGY CONVERSION APPLICATIONS (POWERMEMS) (001), p. 1 - 4, doi: 10.1109/PowerMEMS49317.2019.82063211368; FULL TEXT
(DIENER, DRIE, DWL, KAUFMAN, RIE-CHLORINE, SUSS-MA8) -
GABLECH, I.; SOMER, J.; FOHLEROVÁ, Z.; SVATOŠ, V.; PEKÁREK, J.; KURDÍK, S.; FENG, J.; FECKO, P.; PODEŠVA, P.; HUBÁLEK, J.; NEUŽIL, P., 2018: . MICROFLUIDICS AND NANOFLUIDICS 22(9), p. NA - 7, doi: 10.1007/s10404-018-2125-6; FULL TEXT
(DRIE, DWL, SUSS-MA8, PARYLENE-SCS, XEF2)
Photogallery
Specification
| ICP 3.0 MHz on the top | max. power 3000 W |
|---|---|
| CCP 13.56 MHz at substrate electrode (bias) | max. power 300 W |
| Substrate temperature | from -150 to 300 °C |
| Sample size | up to 6" |
| He backside cooling | |
| Load lock | |
| Bosch or cryo process | |
| Metal-clean reactor | |
| Gases: | SF6, C4F8, O2, CHF3, Ar |
| Processes | etching of Si,SiO2, SiN |
Documents
Here is place for your documents.
+420 54114 9207
nano@ceitec.vutbr.cz
