nanoScanning Auger Microscopy/ Scanning electron microscopy with polarization analysis Scienta Omicron nanoSAM Lab (NANOSAM)
Guarantor:
Dr. Viktor Danchuk
Instrument status:
Operational, 15.7.2024 15:05, The NanoSAM is in operational condition. The ´-24V Error´ is still present, but it doesn´t affect the NanoSAM performance.
Equipment placement:
CEITEC Nano - C1.38a
The NanoSAM LAB S is a dedicated surface analysis UHV system for high resolution structural and chemical analysis by Scanning Auger Microscopy (SAM), Scanning Electron Microscopy (SEM) and Secondary Electron Microscopy with Polarization Analysis (SEMPA) for the characterization of the magnetic domain structure. The instrument is designed for use together with the UHV Gemini high resolution electron column. It includes Matrix software and electronics for static Auger spectroscopy (AES) and Scanning Auger Microscopy (SAM). In combination with the UHV Gemini, Matrix provides an unsurpassed drift correction technology based on auto-correlation of subsequent SEM images. This opens up the possibility to perform long term AES measurements on very small features with low intensity, or elemental-resolved SAM maps of nanostructures with a low concentration of elements of interest and / or low sensitivity factors. The NanoSAM LAB is equipped with high precision goniometer-mounted four axis UHV stage for the combination of high resolution SEM, SAM and SEMPA, which allows heating up to 750 K. Moreover, the NanoSAM LAB embodies preparation chamber which comprises a manipulator with the possibility of heating the sample to 1500 °C by resistive heating and 900 ° C by radiative heating. The preparation chamber contains 8 flanges for user extensions.
Publications:
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UKROPCOVÁ, I.; DAO, R.; ŠTUBIAN, M.; KOLÍBAL, M.; ŠIKOLA, T.; WILLINGER, M.; WANG, Z.; ZLÁMAL, J.; BÁBOR, P., 2023: Electron Tractor Beam: Deterministic Manipulation of Liquid Droplets on Solid Surfaces. ADVANCED MATERIALS INTERFACES 10(2), doi: 10.1002/admi.202201963; FULL TEXT
(NANOSAM, LITESCOPE-LYRA, MIRA-STAN) -
PEJCHAL, T.; BUKVIŠOVÁ, K.; VALLEJOS VARGAS, S.; CITTERBERG, D.; ŠIKOLA, T.; KOLÍBAL, M., 2022: Ga interaction with ZnO surfaces: Diffusion and melt-back etching. APPLIED SURFACE SCIENCE 583, p. 152475 - 6, doi: 10.1016/j.apsusc.2022.152475; FULL TEXT
(WITEC-RAMAN, UHV-DEPOSITION, UHV-PREPARATION, NANOSAM, VERIOS, KRATOS-XPS, HELIOS) -
MANIŠ, J.; MACH, J.; BARTOŠÍK, M.; ŠAMOŘIL, T.; HORÁK, M.; ČALKOVSKÝ, V.; NEZVAL, D.; KACHTÍK, L.; KONEČNÝ, M.; ŠIKOLA, T., 2022: Low temperature 2D GaN growth on Si(111) 7 x 7 assisted by hyperthermal nitrogen ions. NANOSCALE ADVANCES 4(17), p. 1 - 8, doi: 10.1039/d2na00175f; FULL TEXT
(VERIOS, NANOSAM, TITAN, LYRA, ICON-SPM) -
UKRAINTSEV, E.; KROMKA, A.; JANSSEN, W.; HAENEN, K.; TAKEUCHI, D.; BÁBOR, P.; REZEK, B., 2021: Electron emission from H-terminated diamond enhanced by polypyrrole grafting. CARBON 176, p. 642 - 8, doi: 10.1016/j.carbon.2020.12.043; FULL TEXT
(SIMS, NANOSAM) -
Liška, P., 2021: Optical characterization of advanced nanomaterials with a high lateral resolution. MASTER´S THESIS , p. 1 - 91; FULL TEXT
(NANOSAM, SNOM-NANONICS, ICON-SPM, LYRA, TITAN, VERIOS, WITEC-RAMAN, KRATOS-XPS, SIMS)
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Pejchal, T., 2021: Towards highly-doped Ge and ZnO nanowires: Growth, characterization and doping level analysis. PH.D. THESIS ; FULL TEXT
(NANOSAM, WITEC-RAMAN, UHV-DEPOSITION, UHV-PREPARATION, VERIOS, KRATOS-XPS, HELIOS, TITAN, ALD, EVAPORATOR, MIRA-EBL, MPS150) -
KOLÍBAL, M.; PEJCHAL, T.; MUSÁLEK, T.; ŠIKOLA, T., 2018: Catalyst–substrate interaction and growth delay in vapor–liquid–solid nanowire growth. NANOTECHNOLOGY 29(20), p. 1 - 7, doi: 10.1088/1361-6528/aab474; FULL TEXT
(NANOSAM, VERIOS) -
JIANG, L.; XIAO, N.; WANG, B.; GRUSTAN-GUTIERREZ, E.; JING, X.; BÁBOR, P.; KOLÍBAL, M.; LU, G.; WU, T.; WANG, H.; HUI, F.; SHI, Y.; SONG, B.; XIE, X.; LANZA, M., 2017: High-resolution characterization of hexagonal boron nitride coatings exposed to aqueous and air oxidative environments. NANO RESEARCH 10(6), p. 2046 - 10, doi: 10.1007/s12274-016-1393-2; FULL TEXT
(NANOSAM, SIMS) -
ELBADAWI, C.; TRAN, T.; KOLÍBAL, M.; ŠIKOLA, T.; SCOTT, J.; CAI, Q.; LI, L.; TANIGUCHI, T.; WATANABE, K.; TOTH, M.; AHARONOVICH, I.; LOBO, C., 2016: Electron beam directed etching of hexagonal boron nitride. NANOSCALE 8(36), p. 16182 - 5, doi: 10.1039/c6nr04959a; FULL TEXT
(NANOSAM) -
KOLÍBAL, M.; PEJCHAL, T.; VYSTAVĚL, T.; ŠIKOLA, T., 2016: The Synergic Effect of Atomic Hydrogen Adsorption and Catalyst Spreading on Ge Nanowire Growth Orientation and Kinking. NANO LETTERS 16(8), p. 4880 - 7, doi: 10.1021/acs.nanolett.6b01352; FULL TEXT
(NANOSAM, TITAN)
Photogallery
Specification
Features
High Resolution Scanning Electron Microscope with Schottky cathode |
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Scanning Auger Microscopy (SAM) analyzer
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Secondary Electron Microscopy with Polarization Analysis (SEMPA) |
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Preparation chamber |
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Antivibration suspension system |
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Fast entry chamber for rapid loading of samples without breaking the vacuum
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4 electrical contact up to 6 Ghz |
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Scanning Electron Microscope (SEM)
Electron Column | UHV GEMINI |
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Emitter | Schottky cathode |
Accelerating Voltage | 100 eV – 20 keV |
Probe Current | min. 50 nA @ 15 keV |
min. 28 nA @ 3 keV | |
Detectors | Inlens Secondary Electron (SE) detector |
Resolution | < 3 nm @ 15 keV |
< 13 nm @ 1 keV | |
Specimen Stage movements | XYZ : 10 x10 × 10 mm |
Tilt: ± 60°
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Stage heating | up to 750 K |
Maximum sample size | 12×15×4 mm3 |
Basic pressure | < 3e-10 mbar |
Scanning Auger Microscopy (SAM)
SEM-SAM Coincidence at | ~ 22 mm |
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SEM-SAM Angle at | +30° |
Lateral Resolution (@ 1 nA) | <6 nm @ 10 keV |
<10 nm @ of 5 keV | |
Resolution of the Analyzer (beam current 5 nA @ 5 keV, 7 channels) for the sample: Ag line 352 eV, 0.5% resolution and lower |
> 420 KCPS no background
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Image Drift
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<10 nm/10 hours (drift compensation available)
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Charge Neutralization/ Ion Source for depth profiling
Neutralization | Ions with energies 10 eV to 5 keV |
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Ion Sputtering |
Depth profiling @ 1 – 5 keV, current density > 2 mA/cm2
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minimum current of 100 nA for 15 eV |
Secondary Electron Microscopy with Polarization Analysis (SEMPA)
Resolution | <50 nm |
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Image Drift |
<10 nm/10 hours (drift compensation available)
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Detector |
4 channel detection for measurement of 2 orthogonal spin orientations simultaneously with the analysis in several directions (e.g. realized by rotation detector)
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Documents
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