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CEITEC Nano Research Infrastructure

Brno University of Technology
Purkyňova 123, 612 00 Brno
Czech Republic

  +420 54114 9207   
  nano@ceitec.vutbr.cz 

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Scanning Electron Microscope/E-beam writer TESCAN MIRA3Raith LIS (MIRA-EBL)

Scanning Electron Microscope/E-beam writer TESCAN MIRA3Raith LIS
Profile card (PDF)

Guarantor:
Vojtěch Švarc, Ph.D.

Instrument status:
Operational Operational, 16.7.2025 17:18

Equipment placement:
CEITEC Nano - C1.29

SEM is a type of microscope where a focused beam of electrons is scanned over the sample to generate an image or to modify the sample surface in nanometric resolution (usually better than 10 nm). The sample image is generated by detecting secondary and backscattered electrons emitted from the impact location of the beam. The tool is preferred for e-beam lithography, where the resist-coated sample is selectively exposed to the electron beam, allowing the preparation of very small patterns (< 50 nm and less) in the resistant surface. There can be further processing of the sample by wet chemistry (development, stripping). An interferometric stage can also be used to achieve ultimate resolution of electron beam lithography over a large area and to join more fields together.

Publications:

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Specification

Mira3 XMH

A Scanning Electron Microscope combined with a precise laser-based interferometric stage for e-beam patterning of areas up to 45 mm x 45 mm.

Features

  • Scanning Electron Microscope with Schottky cathode for high-resolution/hig­hcurrent/low-noise imaging
  • Laser-based interferometric closed-loop XYZ stage with nanometric resolution and accuracy and repeatability in the other of tens of nanometers
Lithography system Raith Elphy Plus

Proximity effect correction software
Active anti-vibration suspension system
Sample sizeup to 2" wafer size
Chamber vacuum< 9e-3 Pa (< 5e-4 Pa reachable)

Scanning Electron Microscope (SEM)

Tescan Mira 3FEG
Accelerating voltage200 V – 30 kV
Probe current2 pA – 200 nA
View field> 6 mm x 6 mm at WD 9 mm
Magnification1× – 1 000 000×
Detectors (resolution)Secondary Electron (SE) detector (1.2 nm at 30 kV)
In-Beam SE detector (1.0 nm at 30 kV)


Laser Interferometry Stage (LIS) Closed loop

Patterning area45 mm x 45 mm (x 25 mm)
Resolution2 nm
Stitching accuracy<= 100 nm
Overlay accuracy<= 100 nm
Raith Elphy Plus



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