RIE by Chlorine Chemistry Oxford Instruments Plasma Technology PlasmaPro 100 (RIE-CHLORINE)
Guarantor:
Marek Eliáš, Ph.D.
Instrument status:
Operational, 11.10.2024 10:19
Equipment placement:
CEITEC Nano - C1.34
PReactive-ion etching (RIE) is an etching technology used in microfabrication. RIE is a type of dry etching which has different characteristics than wet etching. RIE uses chemically reactive plasma to remove material deposited on wafers. The plasma is generated under low pressure (vacuum) by an electromagnetic field. High-energy ions from the plasma attack the wafer surface and react with it.
A typical (parallel plate) RIE system consists of a cylindrical vacuum chamber, with a wafer platter situated in the bottom portion of the chamber. The wafer platter is electrically isolated from the rest of the chamber. Gas enters through small inlets in the top of the chamber, and exits to the vacuum pump system through the bottom. The types and amount of gas used vary depending upon the etch process; for instance, sulfur hexafluoride is commonly used for etching silicon. Gas pressure is typically maintained in a range between a few millitorr and a few hundred millitorr by adjusting gas flow rates and/or adjusting an exhaust orifice.
Publications:
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ROVENSKÁ, K.; LIGMAJER, F.; IDESOVÁ, B.; KEPIČ, P.; LIŠKA, J.; CHOCHOL, J.; ŠIKOLA, T., 2023: Structural color filters with compensated angle-dependent shifts. OPTICS EXPRESS 31(26), p. 43048 - 9, doi: 10.1364/OE.506069; FULL TEXT
(EVAPORATOR, MIRA-EBL, RIE-CHLORINE, ALD, SNOM-NANONICS, TUBE-FURNACE) -
Jarušek, J., 2022: Sputtering of nitride layers using Kaufman ion-beam source for bioelectronics applications. BACHELOR´S THESIS , p. 1 - 75; FULL TEXT
(DEKTAK, KAUFMAN, RIE-CHLORINE, NANOCALC, RIGAKU9, KEITHLEY-4200) -
MENDOSA-SANDOVAL, E.; RODRIGUEZ-LOPEZ, G.; ORDONEZ-ROMERO, C.; LAY, D.; QURESHI, N.; URBÁNEK, M.; SOLIS-IBARRA, D.; NOGUEZ, C.; LARA-GARCIA, H.; PIRRUCCIO, G., 2022: Shaping and enhancing the photoluminescence of halide perovskite quantum dots with plasmonic lattices. JOURNAL OF MATERIALS CHEMISTRY C , p. 3704 - 9, doi: 10.1039/d1tc05331k; FULL TEXT
(RAITH, MAGNETRON, RIE-CHLORINE, LYRA) -
GABLECH, I.; KLEMPA, J.; PEKÁREK, J.; VYROUBAL, P.; HRABINA, J.; HOLÁ, M.; KUNZ, J.; BRODSKÝ, J.; NEUŽIL, P., 2020: Simple and efficient AlN-based piezoelectric energy harvesters. MICROMACHINES 11(2), p. 1 - 10, doi: 10.3390/mi11020143; FULL TEXT
(DRIE, RIE-CHLORINE, WIRE-BONDER, KAUFMAN) -
GABLECH, I.; BRODSKÝ, J.; PEKÁREK, J.; NEUŽIL, P., 2020: Infinite selectivity of wet SiO2 etching in respect to Al. MICROMACHINES 11(4), p. 365 - 7, doi: 10.3390/mi11040365; FULL TEXT
(EVAPORATOR, SUSS-MA8, RIE-CHLORINE, DWL, SUSS-RCD8)
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GABLECH, I.; KLEMPA, J.; PEKÁREK, J.; VYROUBAL, P.; KUNZ, J.; NEUŽIL, P., 2019: Aluminum nitride based piezoelectric harvesters. 2019 19TH INTERNATIONAL CONFERENCE ON MICRO AND NANOTECHNOLOGY FOR POWER GENERATION AND ENERGY CONVERSION APPLICATIONS (POWERMEMS) (001), p. 1 - 4, doi: 10.1109/PowerMEMS49317.2019.82063211368; FULL TEXT
(DIENER, DRIE, DWL, KAUFMAN, RIE-CHLORINE, SUSS-MA8) -
HRDÝ, R.; PRÁŠEK, J.; FILLNER, P.; VANČÍK, S.; SCHNEIDER, M.; HUBÁLEK, J.; SCHMID, U., 2019: Development of HfO2/Al2O3 Stack for On-Chip Capacitor Applications. INTERNATIONAL SPRING SEMINAR ON ELECTRONICS TECHNOLOGY ISSE , p. 1 - 4, doi: 10.1109/ISSE.2019.8810156; FULL TEXT
(ALD, SUSS-MA8, EVAPORATOR, SUSS-RCD8, DWL, RIE-CHLORINE) -
Brodský, J., 2019: Characterization of graphene elecrical properties on MEMS structures. BACHELOR´S THESIS , p. 1 - 50
(MPS150, WITEC-RAMAN, EVAPORATOR, DRIE, PECVD, DWL, SUSS-MA8, RIE-FLUORINE, RIE-CHLORINE, DIENER, SCIA) -
Vančík, S., 2018: MEMS microhotplate platform for chemical sensors. MASTER´S THESIS , p. 1 - 68
(DWL, ALD, MAGNETRON, EVAPORATOR, RIE-FLUORINE, SUSS-MA8, DEKTAK, MPS150, RIE-CHLORINE)
Photogallery
Specification
ICP 3.0 MHz on the top | max. power 1500 W |
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CCP 13.56 MHz | max. power 300 W |
substrate temperature | from -30 to 80 °C |
sample size | up to 7x7" |
He backside cooling | |
load lock | |
gases: | Ar,O2, SF6,Cl2,BCl3,SiCl4 |
gold clean reactor | |
Processes | etching of metals (Al, Cr, Ti, ...) and III-V semiconductors |
Documents
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