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CEITEC Nano Research Infrastructure

Brno University of Technology
Purkyňova 123, 612 00 Brno
Czech Republic

  +420 54114 9207   
  nano@ceitec.vutbr.cz 

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E-beam writer RAITH150 Two (RAITH)

E-beam writer RAITH150 Two
Profile card (PDF)

Guarantor:
Zuzana Lišková, Ph.D.

Instrument status:
Non Operational Non Operational, 11.8.2026 17:07, Vacuum issue, waiting for remote service

Equipment placement:
CEITEC Nano - C1.29

Raith 150 Two is high-resolution low voltage electron beam lithography (EBL) and metrology system. It is suitable for the research and development of MEMS, micro and nanoelectronic, plasmonic, photonic systems, and integrated optical devices. It comes with sample holders capable of mounting up to 6´ substrate. The fabrication of 20 nm structures is guaranteed, while it is possible to write structures down to 10 nm in size. The system also contains FBMS (fixed beam moving stage) module for the writing of long continuous patterns without stitching errors, and the proximity effect correction SW package is available for optimized writing of near objects.
Raith 150 Two is equipped with an ultra-high-resolution Carl-Zeiss Gemini electron optics system. SEM image is recorded with help of InLens and SE detectors with the resolution of 1 – 2 nm at most acceleration voltages. The range of voltages is 0,3 – 30 kV and the user can select the apertures to control the beam current. High precision writing is possible due to the laser interferometric stage with the lateral movement resolution of 2 nm and large-scale Z travel.
This EBL system is suitable for long, time-demanding exposures also thanks to its split room setup, which ensures environmental isolation together with temperature stabilization.

Publications:

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Photogallery

System specifications



Beam current range:5 pA – 20 nA
Beam energy:20 eV – 30 eV
Stage travel range:150 x 150 x 20 mm
Minimum line width:< 8 nm guaranteed
Current stability:≤ 0.5 % / 8 hours


Lithography specifications

Minimum grating periodicity (20 kV/50 um write field): max. 40 nm period with less than 20 nm line width

Minimum feature size: min. line width less than 8.0 nm


Stitching accuracy (100 um write field/10 kV)

U direction: |mean| + 3sigma less than 35 nm

V direction: |mean| + 3sigma less than 35 nm


Overlay accuracy (100 um write field/10 kV)

U direction: |mean| + 3sigma less than 35 nm

V direction: |mean| + 3sigma less than 35 nm

Documents

External documents and manuals for RAITH

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