UV Direct Write Laser system Heidelberg Instruments DWL 66-fs (DWL)

Radim Zahradníček, Ph.D.

Instrument status:
Operational Operational, 13.9.2021 10:22

Equipment placement:
CEITEC Nano - C1.29

The DWL 66FS laser lithography system is a high resolution pattern generator for low volume mask making and direct writing. The capabilities and flexibility of this system allows to use this research tool in MEMS, BioMEMS, Micro Optics, ASICs, Micro Fluidics, Sensors, CGHs, and all other applications that require microstructures. It can be used for mask making or direct exposure on basically any flat material coated with photoresist. Numerous optional features increase the flexibility and make the system suitable for more applications. If one of your applications requires a special technology, it can most likely be implemented in the DWL 66FS. The system can utilize a variety of different lasers, which makes it possible to expose nearly all photoresists, including UV resists like SU8. In addition to high resolution 2D patterns, it is also possible to create complex 3D structures in thick photoresist with a single pass. By supporting five different write modes the resolution and throughput of the system can be optimized for each application. The optional vector exposure mode will offer even further flexibility such as improved structure quality and a higher throughput for certain designs like waveguides or microfluidic channels. To ensure the stability of the system, it is placed in a climate chamber providing a constant temperature. The optical setup, the autofocus system and the high precision stage system guarantee the quality of the exposed structures. During operation a high resolution interferometer controls the position of the stage with high accuracy. All this allows the system to write structures down to 0.6 μm with an address grid of 50 nm. The DWL 66FS includes two CCD cameras used for metrology and alignment purposes. This enables the system to perform overlay exposures with high accuracy. Arbitrary structures on the substrate can be used for the alignment. The optional backside alignment system uses two additional cameras to align front side exposures to structures on the back side of the substrate.


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DWL 66FS key features

Substratesfrom 10 mm x 10 mm up to 200 mm x 200 mm
Structures resolutiondown to 1 µm
Address griddown to 100 nm
Exposure modeRaster
Special – 3D
Layout alignmentCamera system
AutofocusAir-gauge, Laser
Scripting capability
Data inputs format2DXF, CIF, GDS, Gerber, BMP, Ascii, STL


Multiple write modes

Write mode2
Address Grid [nm]100
Minimum Structure Size [µm]1
Write speed [mm2/min]10
Edge Roughness [3sigma, nm]80
CD Uniformity [3sigma, nm]100
Alignment Accuracy [3sigma, nm]250


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