Mask Aligner, NanoImprint Lithography SÜSS MicroTec MA8/BA8 Gen3 (SUSS-MA8)

Vojtěch Švarc

Instrument status:
Operational Operational, 4.2.2021 12:17

Equipment placement:
CEITEC Nano - C1.30

Resist mask preparation for fabrication of nano and microstructures with ultimate dimensions below 50 nm. Includes resist spin coating facility, complete photolithography setup and electron beam lithography / shared by CEITEC users, open facilities


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Mask and Wafer/Substrate

Wafer Size: 1” – 200 mm
Max. substrate size: 200 x 200 mm
Min. Pieces: 5 x 5 mm
Wafer Thickness: max. 10 mm
Mask Size: standard 2” x 2” up to 9” x 9” (SEMI)

Exposure Modes

Contact: soft, hard, vacuum
Proximity: exposure gap 1–300 mm
Gap setting accuracy: 1 µm
Modes: constant power, constant dose
Options: Flood exposure

Exposure Optics

Resolution: 1,5 µm (vacuum); 2 µm (hard); 3 µm (soft);
3,5 µm (proximity 20 µm)

Wavelength range: UV400 350–450 nm
Exposure source: Hg lamp 1000 W
Intensity uniformity: less than 3,5 % (200 mm)

Alignment methods

Top Side Alignment (TSA): accuracy less than 0,5 µm (with assisted alignment & SUSS MicroTec recommended wafer targets)
Bottom Side Alignment (BSA): accuracy less than 1 µm
TSA Focus Range: 1–400 µm (AL400 – motorized focus and image capturing)

Alignment stage

MA Movement Range: X: +/- 5mm; Y: +/- 5 mm; Theta +/- 5°
Resolution: 0,1 µm

Topside Microscope (TSA)

Movement Range: X: 33–202 mm; Y: +18, -100 mm; Theta: +/- 5°

Bottomside Microscope (BSA)

Movement Range: X: 20–210 mm; Y: +/- 22 mm; focus 6 mm


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