Mask Aligner, NanoImprint Lithography SÜSS MicroTec MA8/BA8 Gen3 (SUSS-MA8)


Guarantor:
Vojtěch Švarc

Instrument status:
Operational Operational, 23.10.2023 14:36

Equipment placement:
CEITEC Nano - C1.30


The Süss MicroTec MA8 is a standard UV lithography tool for exposing wafers through the mask. Exposure can be carried out in proximity mode or in contact mode. The MA8 is equipped with top side optical microscopes and bottom side microscopes, so alignment is possible from both sides of the wafer.


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Specification

Mask and Wafer/Substrate

Wafer Size: 1” – 200 mm
Max. substrate size: 200 x 200 mm
Min. Pieces: 5 x 5 mm
Wafer Thickness: max. 10 mm
Mask Size: standard 2” x 2” up to 9” x 9” (SEMI)


Exposure Modes

Contact: soft, hard, vacuum
Proximity: exposure gap 1–300 mm
Gap setting accuracy: 1 µm
Modes: constant power, constant dose
Options: Flood exposure


Exposure Optics

Resolution: 1,5 µm (vacuum); 2 µm (hard); 3 µm (soft);
3,5 µm (proximity 20 µm)

Wavelength range: UV400 350–450 nm
Exposure source: Hg lamp 1000 W
Intensity uniformity: less than 3,5 % (200 mm)


Alignment methods

Top Side Alignment (TSA): accuracy less than 0,5 µm (with assisted alignment & SUSS MicroTec recommended wafer targets)
Bottom Side Alignment (BSA): accuracy less than 1 µm
TSA Focus Range: 1–400 µm (AL400 – motorized focus and image capturing)


Alignment stage

MA Movement Range: X: +/- 5mm; Y: +/- 5 mm; Theta +/- 5°
Resolution: 0,1 µm


Topside Microscope (TSA)

Movement Range: X: 33–202 mm; Y: +18, -100 mm; Theta: +/- 5°


Bottomside Microscope (BSA)

Movement Range: X: 20–210 mm; Y: +/- 22 mm; focus 6 mm


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