Ion beam etching Scia Systems Coat 200 (SCIA)
Marek Eliáš, Ph.D.
Operational, 14.9.2021 17:31
CEITEC Nano - C1.34
Ion beam etching (IBE) removes material from the etch target by bombardment with directed and precisely controlled ion energies. IBE is also referred to as ´ion beam milling.´
The IBE source generates plasma from a noble gas, typically argon. A set of electrically biased grids establish the ion beam energy and angular divergence of ions within the beam. The ion beam strikes the substrate, removing material by physical sputtering.
Ion beam etching provides directional flexibility that is not available in other plasma processes. While the etch rate with IBE is typically lower than for reactive ion etching (RIE), IBE offers high precision (high anisotropism) for applications that demand exacting profile control. Also, ion beam etching can be used to remove materials where RIE may not be successful. Ion beam can etch alloys and composite materials that are not compatible with RIE.
A tilting and rotating substrate stage allows ion angle of incidence to be altered. This affects sputtering yield and resulting topography. Tilting and rotating the substrate during etching can substantially improve etch profiles and avoid material redeposition.
Endpoint control is available with SIMS (secondary ion mass spectroscopy) to monitor sputtered material species, allowing etching to be stopped at specific layers.
Ion-beam etching has many applications, including nano-machining of magnetic transducers, MEMS devices, and trimming of surface acoustic wave (SAW) and bulk acoustic wave (BAW) filters. A newer application is fabricating high-performance non-volatile memory, specifically ´spin transfer torque´ MRAM (magnetoresistive random-access memory).
Chmela, O., 2020: Progress toward the development of single nanowire-based arrays for gas sensing applications. PH.D THESIS , p. 1 - 199
(ALD, DWL, KAUFMAN, DIENER, SUSS-MA8, SUSS-RCD8, RAITH, MAGNETRON, EVAPORATOR, RIE-FLUORINE, SCIA, DEKTAK, ICON-SPM, NANOCALC, MPS150, WIRE-BONDER)
Brodský, J., 2019: Characterization of graphene elecrical properties on MEMS structures. BACHELOR´S THESIS , p. 1 - 50
(MPS150, WITEC-RAMAN, EVAPORATOR, DRIE, PECVD, DWL, SUSS-MA8, RIE-FLUORINE, RIE-CHLORINE, DIENER, SCIA)
PODEŠVA, P.; GABLECH, I.; NEUŽIL, P., 2018: Nanostructured Gold Microelectrode Array for Ultrasensitive Detection of Heavy Metal Contamination. ANALYTICAL CHEMISTRY 90(2), p. 1161 - 7, doi: 10.1021/acs.analchem.7b0372; FULL TEXT
(SUSS-MA8, DWL, SCIA, DIENER)
CHMELA, O.; SADÍLEK, J.; SAMA, DOMENECH-GIL, G.; J.; SOMER, J.; MOHAN, R.; ROMANO-RODRIGUEZ, A.; HUBÁLEK, J.; VALLEJOS VARGAS, S., 2018: Selectively arranged single-wire based nanosensor array systems for gas monitoring. NANOSCALE 10(19), p. 9087 - 10, doi: 10.1039/c8nr01588k; FULL TEXT
(RAITH, DWL, KAUFMAN, MAGNETRON, SCIA, RIE-FLUORINE, WIRE-BONDER, RIGAKU3)
Pekárek, J.; Prokop, R.; Svatoš, V.; Gablech, I.; Hubálek, J.; Neužil, P., 2017: Self-compensating method for bolometer–based IR focal plane arrays. SENSORS AND ACTUATORS, A: PHYSICAL 265, p. 40 - 46, doi: 10.1016/j.sna.2017.08.025
(SUSS-MA8, EVAPORATOR, RIE-FLUORINE, SUMMIT, SCIA)
Chmela, O; Sadilek, J; Sama, J; Romano-Rodriguez, A; Hubalek, J; Vallejos, S, 2017: Nanosensor array systems based on single functional wires selectively integrated and their sensing properties to C2H6O and NO2. NANOTECHNOLOGY VIII 10248, doi: 10.1117/12.2265000
(RAITH, DWL, KAUFMAN, SCIA, RIE-FLUORINE, MAGNETRON, RIGAKU3)
ECR microwave source at frequency 2,54 GHz
|ion energy||50–2 000 eV|
|sample size||up to 6" wafer|
|sample rotation||5–20 rpm|
|He backside cooling|
|plasma bridge neutraliser|
|reactive gasses||O2, SF6|
endpoint detection system SIMS HAL IMP 301/3F
with accuracy 1 nm
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