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Scanning electron microscope (SEM) MIRA3 XMU (MIRA-STAN)

Scanning electron microscope (SEM) MIRA3 XMU

Guarantor:
Petr Lepcio, Ph.D.

Instrument status:
Operational Operational, 17.3.2026 11:17

Equipment placement:
CEITEC Nano - A1.11

Scanning electron microscope (SEM) MIRA3 XMU

Description

• Scanning electron microscope (SEM) is used to study the morphology and topography of conductive and non-conductive materials in high resolution (micro to nano-scale).
• Observation of surface samples with high depth of focus using multiple detection system (SE, BSE, STEM) including elemental analysis using energy dispersive spectrometer (EDS).

Applications

• Observation of both the surface and internal structure of micro and nano-objects (phase interface such as matrix-filler/reinforcement, particle distribution, aggregates and defects, fracture surfaces, porous 3D materials, units of supramolecular structure, etc.)
• evaluation of the shape and dimensions (length, diameter, volume, roughness) of powders, tubes, short fibers
• fast and highly accurate chemical microanalysis and elemental mapping of a sample surface
• qualitative elemental analysis including determination of the distribution of each element
• quantitative analysis of the individual elements in a sample
• The structural analysis of polymeric materials, biopolymers and composites, biomaterials, ceramics, bones, teeth, substrates for tissue engineering, etc.

Specification

• High Brightness Schottky Emitter
• Detectors:
SE, BSE, In-beam SE, In-Beam BSE
LVSTD
STEM detector
EDX analysis
• High-vacuum (≤9x10-3Pa) or low-vacuum mode (7-500 Pa)
• Magnification 25 to 1 000 000x
• Acceleration voltage 200 V to 30 kV
• X-Y-Z 130×130×100mm
• Maximum specimen height: 106 mm

Publications:

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Photogallery

Specification


Type
MIRA3
ManufacturerTESCAN
Type of microscopeSEM
Electron beam sourceSchottky FEG cathode
Acceleration voltage200 eV – 30 kV
50 eV – 30 kV for Beam Deceleration Mode
Electron beam current2 pA – 200 nA
Magnificationmax 1 000 000 x
View Field6,4 mm at WD 10 mm
DetectorsSE
Low energy BSE
In-Beam SE
In-Beam BSE
STEM (transmission mode) s BF, DF
LVSTD (detector SE v Low-vacuum mode)

Resolution in High-vacuum mode

SE

In-Beam SE
Beam Deceration Mode

STEM

1.2 nm at 30 kV
2.5 nm at 3.0 kV
1.0 nm at 30 kV
1.5 nm at 3.0 kV
2.5 nm at 200 V
0.8 nm at 30 kV
Resolution in Low-vacuum modeBSE
LVSTD		2.0 nm at 30 kV
1.5 nm at 30 kV

Detector EDX
(for elemental analysis)

X-max20
Surface of SDD chipset 20 mm2
<127eV @ Mn Kα
Oxford Instruments
Observation modesResolution, Depth, Field, Wide field, Channeling

Additional imaging modes
(suitable for non-conductive samples)

Beam Deceleration Mode (BDM)
Low vacuum mode

StageStandard TESCAN stage
X, Y = 130 mm (od -65 do +65 mm)
Z = 100 mm
Tilt from -30° to +90°
Rotation 360°
+TESCAN STEM sample holder (8 samples – standard TEM grids)
Peltier stageDiameter of the specimen holder:12.5 mm
Temperature range: -50 °C to +70 °C
(High Vacuum Mode)
Cooling speed:30 °C/min
Temperature accuracy:±1.2 °C
Temperature stability:±0.2 °C
ChamberChamber XM
Width 290 mm x Depth 340 mm
IR navigation camera
VacuumHigh-vacuum mode <9·10-3 Pa
Low-vacuum mode 7–500 Pa
Electron gun pressure <3·10-7 Pa



Documents

MIRA 3 XMU quick guide

MIRA 3 XMU guide

MIRA 3 XMU troubleshooting

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