Atmospheric Pressure Chemical Vapor Deposition (APCVD)

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System for a precisely controlled growth of oxides on silicon wafers in horizontal quartz tubes with soft-loading placement of boats holding up to 50 wafers in one run. Temperature is controlled in 3 independent zones. The basic process consists of dry or wet thermal oxide growth; in the latter case, a H2-O2 mixture reacts in an external burner. Excessive deposits are cleaned using dichloroethylene (DCE) injection.

Publications:

• LIU, X.; FECKO, P.; FOHLEROVÁ, Z.; PEKÁREK, J.; KARÁSEK, T.; NEUŽIL, P., 2020: Parylene Micropillars Coated with Thermally Grown SiO2. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 38(6), p. 38 - 6, doi: 10.1116/6.0000558; FULL TEXT
  (SUSS-MA8, SUSS-RCD8, DWL, DRIE, RIE-FLUORINE, PARYLENE-SCS, XEF2, APCVD, LYRA)