High temperature plasma enhanced chemical vapour deposition system on C-based materials Oxford Instruments Plasma Technology NanoFab (PECVD-NANOFAB)


High temperature plasma enhanced chemical vapour deposition system on C-based materials Oxford Instruments Plasma Technology NanoFab

Guarantor:
Marek Eliáš, Ph.D.

Instrument status:
Operational Operational, 28.5.2021 13:42

Equipment placement:
CEITEC Nano - C1.34

Upcoming trainings:
21.9. 09:30 - 12:30: Nanofab- training -


Chemical vapour deposition system going to very high deposition temperatures dedicated to the deposition of carbon nanomaterials, possibilities of plasma enhancement by discharges of different frequency (including their regular switching).


Publications:

Photogallery

Specification

CCP 13.56 at the upper electrode  max. power 600 W
high frequency 50–400 kHz plasma source
max. power 300 W
substrate temperature 
RT to 1100 °C
grounded substrate
sample size up to 6"
He backside cooling

loadlock

gases:O2, Ar2, CH4, C2H2, H2
Processesdeposition of carbon nanotubes and graphene


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