UV Direct Write Laser system Heidelberg Instruments DWL 66-fs (DWL)


Guarantor:
Radim Zahradníček, Ph.D.

Instrument status:
Operational Operational, 1.11.2024 12:49

Equipment placement:
CEITEC Nano - C1.29


Resist mask preparation for fabrication of nano and microstructures with ultimate dimensions below 50 nm. Includes resist spin coating facility, complete photolithography setup and electron beam lithography / shared by CEITEC users, open facilities


Publications:

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Photogallery

Specification

DWL 66FS key features

Substratesfrom 10 mm x 10 mm up to 200 mm x 200 mm
Structures resolutiondown to 1 µm
Address griddown to 100 nm
Exposure modeRaster
Special – 3D
Layout alignmentCamera system
ChamberClimate
AutofocusAir-gauge, Laser
Scripting capability
Data inputs format2DXF, CIF, GDS, Gerber, BMP, Ascii, STL

Advanced

Multiple write modes

Write mode2
Address Grid [nm]100
Minimum Structure Size [µm]1
Write speed [mm2/min]10
Edge Roughness [3sigma, nm]80
CD Uniformity [3sigma, nm]100
Alignment Accuracy [3sigma, nm]250


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