Resist stripper Diener electronic NANO Plasma cleaner (DIENER)


Resist stripper Diener electronic NANO Plasma cleaner

Guarantor:
Marek Eliáš, Ph.D.

Instrument status:
Operational Operational, 9.2.2018 16:38

Equipment placement:
CEITEC Nano - C1.30


Diener NANO Plasma Cleaner with microwave generator can be used for stripping of the resist. Microwave plasma is ideal for most resist removal in modern device fabrication because it produces a very high concentration of chemically active species along with low energy ion bombardment. Therefore, it guarantees fast ash rate and a damage-free plasma cleaning. Microwave plasma systems are suitable for various substrate technologies like Si, III/V-compounds, quartz, ceramic, lithium niobate, copper interconnect devices etc. Oxygen plasma generates oxygen radicals and O2 ions. It is well suited for the removing of photoresist because oxygen radicals fast etch polymers and organics under formation of CO2 and water (ashing). The samples (max. size 8‘‘) can be heated (up to 100 C) by the chuck in order to ease the stripping of the photoresist.
In biomedical applications, plasma cleaning is useful for achieving compatibility between synthetic biomaterials and natural tissues. Surface modification minimizes adverse reactions such as inflammation, infection, and thrombosis formation.


Publications:

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Photogallery

Specification

Cleaning

Cleaning – Metal

Metal Aluminium O2 0.2 – 0.5 mbar
Gold O2/Ar
Stainless steel O2

Cleaning – Plastic

Plastic ABS O2 0.2 – 0.5 mbar
PA
PE
POM
PP

Cleaning – Other

Other Al2O3 O2 0.2 – 0.5 mbar
SiO2

Activation

Activation – Metal

Metal Aluminium O2 0.2 – 0.5 mbar
Gold O2/Ar
Stainless steel O2

Activation – Plastic

Plastic ABS O2 0.2 – 0.5 mbar
PA
PE
POM
PP

Activation – Other

Other Al2O3 O2 0.2 – 0.5 mbar
SiO2
Powder

Etching

Etching – Metal

Metal Copper Ar 0.2 – 0.4 mbar
Iron (Fe, Ni) Ar + O2 0.2 – 0.5 mbar
Silver Ar 0.2 – 0.5 mbar

Etching – Plastic

Plastic PPS O2 0.1 – 0.4 mbar

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