Mask Aligner, NanoImprint Lithography SÜSS MicroTec MA8/BA8 Gen3 (SUSS-MA8)


Guarantor:
Vojtěch Švarc

Instrument status:
Some Issues Some Issues, 23.7.2020 08:31, Testing after service repair. RAID is not working and Power supply should be exchanged soon - report any issues with the computer; Mouse is somehow not working...

Equipment placement:
CEITEC Nano - C1.30


Resist mask preparation for fabrication of nano and microstructures with ultimate dimensions below 50 nm. Includes resist spin coating facility, complete photolithography setup and electron beam lithography / shared by CEITEC users, open facilities


Publications:

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Photogallery

Specification

Mask and Wafer/Substrate

Wafer Size: 1” – 200 mm
Max. substrate size: 200 x 200 mm
Min. Pieces: 5 x 5 mm
Wafer Thickness: max. 10 mm
Mask Size: standard 2” x 2” up to 9” x 9” (SEMI)


Exposure Modes

Contact: soft, hard, vacuum
Proximity: exposure gap 1–300 mm
Gap setting accuracy: 1 µm
Modes: constant power, constant dose
Options: Flood exposure


Exposure Optics

Resolution: 1,5 µm (vacuum); 2 µm (hard); 3 µm (soft);
3,5 µm (proximity 20 µm)

Wavelength range: UV400 350–450 nm
Exposure source: Hg lamp 1000 W
Intensity uniformity: less than 3,5 % (200 mm)


Alignment methods

Top Side Alignment (TSA): accuracy less than 0,5 µm (with assisted alignment & SUSS MicroTec recommended wafer targets)
Bottom Side Alignment (BSA): accuracy less than 1 µm
TSA Focus Range: 1–400 µm (AL400 – motorized focus and image capturing)


Alignment stage

MA Movement Range: X: +/- 5mm; Y: +/- 5 mm; Theta +/- 5°
Resolution: 0,1 µm


Topside Microscope (TSA)

Movement Range: X: 33–202 mm; Y: +18, -100 mm; Theta: +/- 5°


Bottomside Microscope (BSA)

Movement Range: X: 20–210 mm; Y: +/- 22 mm; focus 6 mm


Documents

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