Temperature effect on Al predose and AlN nucleation affecting the buffer layer performance for the GaN-on-Si based high-voltage devices

Japanese Journal of Applied Physics

Novák, T.; Kostelník, P.; Konečný, M.; Čechal, J.; Kolíbal, M.; Šikola, T., 2019: Temperature effect on Al predose and AlN nucleation affecting the buffer layer performance for the GaN-on-Si based high-voltage devices. JAPANESE JOURNAL OF APPLIED PHYSICS 58, p. SC1018-1 - SC1018-9, doi: 10.7567/1347-4065/ab0d00
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