Temperature effect on Al predose and AlN nucleation affecting the buffer layer performance for the GaN-on-Si based high-voltage devices

JAPANESE JOURNAL OF APPLIED PHYSICS

NOVÁK, T.; KOSTELNÍK, P.; KONEČNÝ, M.; ČECHAL, J.; KOLÍBAL, M.; ŠIKOLA, T., 2019: Temperature effect on Al predose and AlN nucleation affecting the buffer layer performance for the GaN-on-Si based high-voltage devices. JAPANESE JOURNAL OF APPLIED PHYSICS 58, p. SC1018-1 - 9, doi: 10.7567/1347-4065/ab0d00; FULL TEXT
(KRATOS-XPS, ICON-SPM)

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