X-ray induced electrostatic graphene doping via defect charging in gate dielectric

SCIENTIFIC REPORTS

PROCHÁZKA, P.; MAREČEK, D.; LIŠKOVÁ, Z.; ČECHAL, J.; ŠIKOLA, T., 2017: X-ray induced electrostatic graphene doping via defect charging in gate dielectric. SCIENTIFIC REPORTS 7, p. 1 - 7, doi: 10.1038/s41598-017-00673-z; FULL TEXT
(MIRA-EBL, DIENER, ALD, WIRE-BONDER)

Equipment:

• Scanning Electron Microscope/E-beam writer TESCAN MIRA3Raith LIS (MIRA-EBL)
• Resist stripper Diener electronic NANO Plasma cleaner (DIENER)
• Atomic layer deposition system Ultratech/CambridgeNanoTech Fiji 200 (ALD)
• Wire bonder TPT HB 16 (WIRE-BONDER)

Research Groups:

• Fabrication and Characterisation of Nanostructures
• CF: CEITEC Nano
• Molecular Nanostructures at Surfaces

CEITEC authors:

• Pavel Procházka, Ph.D.
• Prof. Jan Čechal, Ph.D.
• Prof. Tomáš Šikola
• Zuzana Lišková, Ph.D.