Resistive Random Access Memory Cells with a Bilayer TiO2/SiOX Insulating Stack for Simultaneous Filamentary and Distributed Resistive Switching

ADVANCED FUNCTIONAL MATERIALS

Xiao, N.;Villena, M.A.; Yuan, B.; Chen, S.; Wang, B.; Eliáš, M.; Shi, Y.; Hui, F.; Jing, X.; Scheuermann, A.; Tang, K.; McIntyre, P.C., 2017: Resistive Random Access Memory Cells with a Bilayer TiO2/SiOX Insulating Stack for Simultaneous Filamentary and Distributed Resistive Switching. ADVANCED FUNCTIONAL MATERIALS 27(33), p. 859 - 7, doi: 10.1002/adfm.201700384; FULL TEXT
(ALD)

Equipment:

• Atomic layer deposition system Ultratech/CambridgeNanoTech Fiji 200 (ALD)

Research Groups:

• CF: CEITEC Nano

CEITEC authors:

• Marek Eliáš, Ph.D.