Low temperature 2D GaN growth on Si(111) 7 x 7 assisted by hyperthermal nitrogen ions

NANOSCALE ADVANCES

MANIŠ, J.; MACH, J.; BARTOŠÍK, M.; ŠAMOŘIL, T.; HORÁK, M.; ČALKOVSKÝ, V.; NEZVAL, D.; KACHTÍK, L.; KONEČNÝ, M.; ŠIKOLA, T., 2022: Low temperature 2D GaN growth on Si(111) 7 x 7 assisted by hyperthermal nitrogen ions. NANOSCALE ADVANCES 4(17), p. 1 - 8, doi: 10.1039/d2na00175f; FULL TEXT
(VERIOS, NANOSAM, TITAN, LYRA, ICON-SPM)

Equipment:

• High resolution Scanning Electron Microscope FEI Verios 460L (VERIOS)
• nanoScanning Auger Microscopy/ Scanning electron microscopy with polarization analysis Scienta Omicron nanoSAM Lab (NANOSAM)
• High-resolution (scanning) Transmission Electron Microscope FEI Titan Themis 60-300 cubed (TITAN)
• Focused Ion Beam/Scanning Electron Microscope TESCAN LYRA3 (LYRA)
• Scanning Probe Microscope Bruker Dimension Icon (ICON-SPM)

Research Groups:

• Fabrication and Characterisation of Nanostructures
• CF: CEITEC Nano

CEITEC authors:

• Jindřich Mach, Ph.D.
• Miroslav Bartošík, Ph.D.
• Tomáš Šamořil, Ph.D.
• Michal Horák, Ph.D.
• Vojtěch Čalkovský
• David Nezval, Ph.D.
• Martin Konečný
• Prof. Tomáš Šikola