Graphene–insulator–metal diodes: Enhanced dielectric strength of the Al2O3 barrier
AIP Advances
Kunc, J.; Fridrišek, T.; Shestopalov, M.; Jo, J.; Park, K., 2024: Graphene–insulator–metal diodes: Enhanced dielectric strength of the Al2O3 barrier. AIP ADVANCES 14(9), p. 1 - 9, doi: 10.1063/5.0223763; FULL TEXT
(RAITH, RIE-FLUORINE, ALD, EVAPORATOR, WIRE-BONDER, KRATOS-XPS)
Equipment:
- E-beam writer RAITH150 Two (RAITH)
- RIE by F Chemistry and PECVD of hard C-based films Oxford Instruments Plasma Technology PlasmaPro 80 (RIE-FLUORINE)
- Atomic layer deposition system Ultratech/CambridgeNanoTech Fiji 200 (ALD)
- Electron beam evaporator BESTEC (EVAPORATOR)
- Wire bonder TPT HB 16 (WIRE-BONDER)
- X-ray Photoelectron Spectroscopy Axis Supra (KRATOS-XPS)
Research Groups: