Ultrathin Indium Tin Oxide Accumulation Mode Electrolyte-Gated Transistors for Bioelectronics

ADVANCED MATERIALS TECHNOLOGIES

MIGLIACCIO, L.; SAY, M.; PATHAK, G.; GABLECH, I.; BRODSKÝ, J.; DONAHUE, M.; GLOWACKI, E., 2025: Ultrathin Indium Tin Oxide Accumulation Mode Electrolyte-Gated Transistors for Bioelectronics. ADVANCED MATERIALS TECHNOLOGIES , p. 2302219 - 9, doi: 10.1002/admt.202302219; FULL TEXT
(SUSS-MA8, RIE-FLUORINE, PARYLENE-DIENER, KEITHLEY-4200)

Equipment:

• Mask Aligner, NanoImprint Lithography SÜSS MicroTec MA8/BA8 Gen3 (SUSS-MA8)
• RIE by F Chemistry and PECVD of hard C-based films Oxford Instruments Plasma Technology PlasmaPro 80 (RIE-FLUORINE)
• PARYLENE-DIENER (PARYLENE-DIENER)
• Keithley 4200-SCS Parameter Analyzer (KEITHLEY-4200)

Research Groups:

• Bioelectronics Materials and Devices
• CF: CEITEC Nano

CEITEC authors:

• Imrich Gablech, Ph.D.
• Jan Brodský
• Prof. Eric Daniel Glowacki, Ph.D.