Ultrathin Indium Tin Oxide Accumulation Mode Electrolyte‐Gated Transistors for Bioelectronics
Advanced Materials Technologies
Migliaccio, L.; Say, M. G.; Pathak, G.; Gablech, I.; Brodský, J.; Donahue, M. J.; Głowacki, E. D., 2024: Ultrathin Indium Tin Oxide Accumulation Mode Electrolyte‐Gated Transistors for Bioelectronics. ADVANCED MATERIALS TECHNOLOGIES , doi: 10.1002/admt.202302219; FULL TEXT
(SUSS-MA8, RIE-FLUORINE, PARYLENE-DIENER, KEITHLEY-4200)
Equipment:
- Mask Aligner, NanoImprint Lithography SÜSS MicroTec MA8/BA8 Gen3 (SUSS-MA8)
- RIE by F Chemistry and PECVD of hard C-based films Oxford Instruments Plasma Technology PlasmaPro 80 (RIE-FLUORINE)
- PARYLENE-DIENER (PARYLENE-DIENER)
- Keithley 4200-SCS Parameter Analyzer (KEITHLEY-4200)
Research Groups:
CEITEC authors: