Optimization of Cryogenic Deep Reactive Ion Etching Process for On-Chip Energy Storage

INTERNATIONAL SPRING SEMINAR ON ELECTRONICS TECHNOLOGY ISSE

PRÁŠEK, J.; HOUŠKA, D.; HRDÝ, R.; HUBÁLEK, J.; SCHMID, U., 2019: Optimization of Cryogenic Deep Reactive Ion Etching Process for On-Chip Energy Storage. INTERNATIONAL SPRING SEMINAR ON ELECTRONICS TECHNOLOGY ISSE , p. 1 - 6, doi: 10.1109/ISSE.2019.8810293; FULL TEXT
(DRIE, SUSS-MA8, SUSS-RCD8, EVAPORATOR, DWL, ICON-SPM)

Equipment:

• Deep reactive ion etching of Si-based materials Oxford Instruments Plasma Technology PlasmaPro 100 (DRIE)
• Mask Aligner, NanoImprint Lithography SÜSS MicroTec MA8/BA8 Gen3 (SUSS-MA8)
• Resist coating and development system SÜSS MicroTec RCD8 (SUSS-RCD8)
• Electron beam evaporator BESTEC (EVAPORATOR)
• UV Direct Write Laser system Heidelberg Instruments DWL 66-fs (DWL)
• Scanning Probe Microscope Bruker Dimension Icon (ICON-SPM)

Research Groups:

• CF: CEITEC Nano

CEITEC authors:

• Jan Prášek, Ph.D.
• Radim Hrdý, Ph.D.
• Prof. Jaromír Hubálek, Ph.D.