
Nitride MOCVD reactor
Description
Manufactured and assembled by SVCS company we have a general-purpose experimental reactor
Properties
substrate temperature range | from room temp. up to 1300 °C |
---|---|
bubbler temperature control | 0–50 °C |
precursors | trimethylgalium, trimethylaluminium |
pressure control | 0.1–103 kPa |
doping | silicon (SiH4), magnesium |
designed materials | GaN, AlN, InN |
nonhomogeneity | unknown |