Nitride MOCVD reactor

Description

Manufactured and assembled by SVCS company we have a general-purpose experimental reactor

substrate temperature range	from room temp. up to 1300 °C
bubbler temperature control	0–50 °C
precursors	trimethylgalium, trimethylaluminium
pressure control	0.1–103 kPa
doping	silicon (SiH₄), magnesium
designed materials	GaN, AlN, InN
nonhomogeneity	unknown