Nitride MOCVD reactor

Description

Manufactured and assembled by SVCS company we have a general-purpose experimental reactor 

Properties

substrate temperature rangefrom room temp. up to 1300 °C
bubbler temperature control0–50 °C
precursorstrimethylgalium, trimethylaluminium
pressure control0.1–103 kPa
dopingsilicon (SiH4), magnesium 
designed materialsGaN, AlN, InN
nonhomogeneityunknown