Near-zero hysteresis van der Waals MnAl2S4 field-effect transistors with low minimal threshold voltage degradation and high thermal stability

COMMUNICATIONS MATERIALS

SATTARI-ESFAHLAN, S.; ILLARIONOV, Y.; XU, F.; PROVIAS, A.; MIRZAEI, S.; MICHALIČKA, J.; KNOBLOCH, T.; MAN, O.; ZHOU, Y.; GRASSER, T., 2026: Near-zero hysteresis van der Waals MnAl2S4 field-effect transistors with low minimal threshold voltage degradation and high thermal stability. COMMUNICATIONS MATERIALS , doi: 10.1038/s43246-025-01020-w; FULL TEXT

Research Groups:

• CF: CEITEC Nano

CEITEC authors:

• Ondřej Man, Ph.D.
• Saeed Mirzaei, Ph.D.