Metal organic chemical vapor deposition (MOCVD) (MOCVD)

Filip Münz, Ph.D.

Instrument status:
Operational Operational, 5.3.2019 09:58, Testing regime - contact guarantee for assanator training

Equipment placement:
CEITEC Nano - C1.34

System for deposition of thin layers of metal oxides on a horizontally oriented wafer/sample inside a cylindric steel reactor, with higher growth speed and lower control of layer thickness than a related ALD technique. Metal-organic precursors are delivered through a shower-head placed directly above a rotating heated substrate holder, they decompose in contact with the substrate and organic residuals are extracted from the reactor with high-performance pump system.



substrate temperature range from room temp. up to 800 °C
bubbler temperature control 10–50 °C
CEM line heater up to 70 °C
pressure control 0.1–103 kPa

designed materials TiO2, Fe2O3, BaTiO3, PbZrTiO3, HfO2
nonhomogeneity < 3%



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