Luminescence redshift of thick InGaN/GaN heterostructures induced by the migration of surface adsorbed atoms

VANĚK, T., HÁJEK, F., DOMINEC, F., HUBÁČEK, T., KULDOVÁ, K., PANGRÁC, J., KOŠUTOVÁ, T., KEJZLAR, P., BÁBOR, P., LACHOWSKI, A., HOSPODKOVÁ, A., 2021: . JOURNAL OF CRYSTAL GROWTH 565, p. 126151 - 6, doi: 10.1016/j.jcrysgro.2021.126151; FULL TEXT
(SIMS)

Equipment:

• Secondary Ion Mass Spectroscopy ION-TOF TOF.SIMS5 (SIMS)

Research Groups:

• Fabrication and Characterisation of Nanostructures
• CF: CEITEC Nano

CEITEC authors:

• Petr Bábor, Ph.D.