Low pressure chemical vapor deposition - Nitrides (LPCVD-SiN)


Guarantor:
Radim Hrdý, Ph.D.

Instrument status:
Operational Operational, 3.10.2025 08:00

Equipment placement:
CEITEC Nano - C1.34


System for a precisely controlled growth of silicon nitride in horizontal quartz tubes with soft-loading placement of boats holding up to 50 wafers in one run. Temperature is controlled in 3 independent zones. The basic process consists of a low-pressure process from SiH2Cl2 and NH3 precursors.

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