Backside metallization affects residual stress and bending strength of the recast layer in laser-diced Si

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

ZIEGELWANGER, T.; REISINGER, M.; MATOY, K.; MEDJAHED, A.; ZÁLEŠÁK, J.; GRUBER, M.; MEINDLHUMER, M.; KECKES, J., 2024: Backside metallization affects residual stress and bending strength of the recast layer in laser-diced Si. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING 181, p. 1 - 11, doi: 10.1016/j.mssp.2024.108579; FULL TEXT
(HELIOS, TITAN)

Equipment:

• Focused Ion Beam/Scanning Electron Microscope FEI Helios NanoLab 660 (HELIOS)
• High-resolution (scanning) Transmission Electron Microscope FEI Titan Themis 60-300 cubed (TITAN)

Research Groups:

• CF: CEITEC Nano