Recombination activity of threading dislocations in MOVPE-grown AlN/Si {111} films etched by phosphoric acid

JOURNAL OF APPLIED PHYSICS

PONGRÁCZ, J.; VACEK, P.; GRÖGER, R., 2023: Recombination activity of threading dislocations in MOVPE-grown AlN/Si {111} films etched by phosphoric acid. JOURNAL OF APPLIED PHYSICS 134(19), doi: 10.1063/5.0171937; FULL TEXT
(LYRA, ICON-SPM, HELIOS, TITAN, LEICACOAT-NANO)

Equipment:

• Focused Ion Beam/Scanning Electron Microscope TESCAN LYRA3 (LYRA)
• Scanning Probe Microscope Bruker Dimension Icon (ICON-SPM)
• Focused Ion Beam/Scanning Electron Microscope FEI Helios NanoLab 660 (HELIOS)
• High-resolution (scanning) Transmission Electron Microscope FEI Titan Themis 60-300 cubed (TITAN)
• High vacuum coating system for electron microscopy Leica Microsystems EM ACE 600 (LEICACOAT-NANO)

Research Groups:

• Multiscale Modelling and Measurements of Physical Properties
• CF: CEITEC Nano

CEITEC authors:

• Roman Gröger, Ph.D.