Metal organic chemical vapor deposition (MOCVD) (MOCVD)
Filip Münz, Ph.D.
Operational, 5.3.2019 09:58, Testing regime - contact guarantee for assanator training
CEITEC Nano - C1.34
System for deposition of thin layers of metal oxides on a horizontally oriented wafer/sample inside a cylindric steel reactor, with higher growth speed and lower control of layer thickness than a related ALD technique. Metal-organic precursors are delivered through a shower-head placed directly above a rotating heated substrate holder, they decompose in contact with the substrate and organic residuals are extracted from the reactor with high-performance pump system.
|substrate temperature range||from room temp. up to 800 °C|
|bubbler temperature control||10–50 °C|
|CEM line heater||up to 70 °C|
|pressure control||0.1–103 kPa|
|designed materials||TiO2, Fe2O3, BaTiO3, PbZrTiO3, HfO2|
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