Low pressure chemical vapor deposition - Nitrides (LPCVD-SiN)


Guarantor:
Filip Münz, Ph.D.

Instrument status:
Operational Operational, 9.2.2018 16:44

Equipment placement:
CEITEC Nano - C1.34


This position within the LPCVD system is dedicated to growth of silicon nitrides of different stechiometry on Si wafers, using dichlorosilane (SiCl2H2) and ammonia (NH3) as precursors in LPCVD process.

Photogallery

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