Low pressure chemical vapor deposition - Nitrides (LPCVD-SiN)
Filip Münz, Ph.D.
Operational, 9.2.2018 16:44
CEITEC Nano - C1.34
This position within the LPCVD system is dedicated to growth of silicon nitrides of different stechiometry on Si wafers, using dichlorosilane (SiCl2H2) and ammonia (NH3) as precursors in LPCVD process.
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