Low pressure chemical vapor deposition - amorphous Si (growth of oxides / oxinitrides) (LPCVD-polySi)

Instrument status:
Operational, 9.2.2018 16:45

Equipment placement:
CEITEC Nano - C1.34

This position within the LPCVD system is dedicated to growth of amorphous silicon on Si wafers, using silane (SiH4) as a precursor in LPCVD process.

Typical deposition conditions

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