Luminescence redshift of thick InGaN/GaN heterostructures induced by the migration of surface adsorbed atoms

JOURNAL OF CRYSTAL GROWTH

VANĚK, T., HÁJEK, F., DOMINEC, F., HUBÁČEK, T., KULDOVÁ, K., PANGRÁC, J., KOŠUTOVÁ, T., KEJZLAR, P., BÁBOR, P., LACHOWSKI, A., HOSPODKOVÁ, A., 2021: Luminescence redshift of thick InGaN/GaN heterostructures induced by the migration of surface adsorbed atoms. JOURNAL OF CRYSTAL GROWTH 565, p. 126151 - 6, doi: 10.1016/j.jcrysgro.2021.126151; FULL TEXT
(SIMS)

Equipment:

• Secondary Ion Mass Spectroscopy ION-TOF TOF.SIMS5 (SIMS)

Research Groups:

• Fabrication and Characterisation of Nanostructures
• CF: CEITEC Nano

CEITEC authors:

• Petr Bábor, Ph.D.