Wire bonder TPT HB 16

Robert Dóczy

Wire bonding is a micro-welding technique for electrical interconnection of the sample substrate structures and semiconductor chip thin metallic layers. Contact between the sample surface and pure gold, alloyed aluminum or copper wire is provided by three main methods: ultrasonic, thermocompression and thermosonic bonding. The welding process is realized by wire attached to the substrate by bonding tool at the end of ultrasonic transducer, which is getting closer to certain distance to the sample surface. To achieve enhanced welding capability, sample is heated up to a certain temperature, for most processes being in the range from 20 °C to 250 °C. Attachment techniques defined by bonder tools are performed by wedge-wedge, ball-wedge, ribbon and bump bonding class.

Thermosonic wire bonder wor wedge and ball bonding

Wire Bonding methodsUltrasonic
Thermocompression
Thermosonic
Ultrasonic transducer62 kHz, up zo 2W power
Sample sizeup to 100 mm x 150 mm
Sample (chip) holder – chuckheated up to 250 °C
Wire materialGold
AlSi1
Wire diametersfrom 17 um up to 75 um
Wire optionribbon up to 25 um x 250 um
Loop shapingmotorized Y and Z axis with 9 intersection points
Softwarepossibility to store up to 100 recipes

Advanced

Ultrasonic power0 – 2 000 mWatt output
Bond time0 – 10 s
Bond force0 – 1 500 mN
Bonding tooldiameter 1,58 mm, length 19 mm
Motorized wire spoolsiamater 50,8 mm
Wire terminationbond head tear / clamp tear
Wire feed angel90 °
Clamp movementmotorized, Up / Down
Motor speed (axis Y, Z)0 – 100 %

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