Scanning electron microscopy with polarization analysis Scienta Omicron nanoSAM Lab<br>

Marek Otevřel

The NanoSAM LAB S is a dedicated surface analysis UHV system for high resolution structural and chemical analysis by Scanning Auger Microscopy (SAM), Scanning Electron Microscopy (SEM) and Secondary Electron Microscopy with Polarization Analysis (SEMPA) for the characterization of the magnetic domain structure. The instrument is designed for use together with the UHV Gemini high resolution electron column. It includes Matrix software and electronics for static Auger spectroscopy (AES) and Scanning Auger Microscopy (SAM). In combination with the UHV Gemini, Matrix provides an unsurpassed drift correction technology based on auto-correlation of subsequent SEM images. This opens up the possibility to perform long term AES measurements on very small features with low intensity, or elemental-resolved SAM maps of nanostructures with a low concentration of elements of interest and / or low sensitivity factors. The NanoSAM LAB is equipped with high precision goniometer-mounted four axis UHV stage for the combination of high resolution SEM, SAM and SEMPA, which allows heating up to 750 K. Moreover, the NanoSAM LAB embodies preparation chamber which comprises a manipulator with the possibility of heating the sample to 1500 °C by resistive heating and 900 ° C by radiative heating. The preparation chamber contains 8 flanges for user extensions.


High Resolution Scanning Electron Microscope with Schottky cathode
Scanning Auger Microscopy (SAM) analyzer
Secondary Electron Microscopy with Polarization Analysis (SEMPA)
Preparation chamber
Antivibration suspension system
Fast entry chamber for rapid loading of samples without breaking the vacuum
4 electrical contact up to 6 Ghz

Scanning Electron Microscope (SEM)

Electron ColumnUHV GEMINI
EmitterSchottky cathode
Accelerating Voltage100 eV – 20 keV
Probe Currentmin. 50 nA @ 15 keV
min. 28 nA @ 3 keV
DetectorsInlens Secondary Electron (SE) detector
Resolution< 3 nm @ 15 keV
< 13 nm @ 1 keV
Specimen Stage movementsXYZ : 10 x10 × 10 mm
Tilt: ± 60°
Stage heatingup to 750 K
Maximum sample size12×15×4 mm3
Basic pressure< 3e-10 mbar

Scanning Auger Microscopy (SAM)

SEM-SAM Coincidence at~ 22 mm
SEM-SAM Angle at+30°
Lateral Resolution (@ 1 nA)<6 nm @ 10 keV
<10 nm @ of 5 keV
Resolution of the Analyzer (beam current 5 nA @ 5 keV, 7 channels) for the sample: Ag line 352 eV, 0.5% resolution and lower> 420 KCPS no background
Image Drift<10 nm/10 hours (drift compensation available)

Charge Neutralization/ Ion Source for depth profiling

NeutralizationIons with energies 10 eV to 5 keV
Ion SputteringDepth profiling @ 1 – 5 keV, current density > 2 mA/cm2
minimum current of 100 nA for 15 eV

Secondary Electron Microscopy with Polarization Analysis (SEMPA)

Resolution<50 nm
Image Drift<10 nm/10 hours (drift compensation available)
Detector4 channel detection for measurement of 2 orthogonal spin orientations simultaneously with the analysis in several directions (e.g. realized by rotation detector)

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