Scanning electron microscope (SEM) MIRA3 XMU (MIRA3-XMU)
Petr Lepcio, Ph.D.
Operational, 21.8.2020 14:04
CEITEC Nano - A1.11
10.11. 09:00 - 10:30: Mira3 XMU for Lyra users - Only for users with an active Lyra certificate. Meet at the microscope.
22.10. 09:00 - 10:30: Mira3 XMU for Lyra users - Only for users with an active Lyra certificate. Meet at the microscope.
22.10. 08:00 - 20.10. 09:00: Mira3 XMU for Lyra users - Only for users with an active Lyra certificate. Meet at the microscope.
Scanning electron microscope (SEM) MIRA3 XMU
• Scanning electron microscope (SEM) is used to study the morphology and topography of conductive and non-conductive materials in high resolution (micro to nano-scale).
• Observation of surface samples with high depth of focus using multiple detection system (SE, BSE, STEM) including elemental analysis using energy dispersive spectrometer (EDS).
Acessory: Sputtering and Carbon Thread Coater Leica EM ACE600 for coating non-conductive material with a thin layer (thickness in nanometers) of conductive material.
• carbon coating and high vacuum sputtering of metals (gold, platinum, titanium, gold/palladium)
• integrated measurement of coating thickness based on the QCM crystal with an accuracy of 0.1 nm
• plasma cleaning of the sample and the interior part of equipment
• Observation both the surface and internal structure of micro and nano-objects (phase interface such as matrix-filler/reinforcement, particle distribution, aggregates and defects, fracture surfaces, porous 3D materials, units of supramolecular structure and so on)
• evaluation of the shape and dimensions (length, diameter, volume, roughness) of powders, tubes, short fibers
• fast and highly accurate chemical microanalysis and elemental mapping of a sample surface
• qualitative elemental analysis including determination of the distribution of each element
• quantitative analysis of the individual elements in a sample
• The structural analysis of polymeric materials, biopolymers and composites, biomaterials, ceramics, bones, teeth, substrates for tissue engineering, etc.
• High Brightness Schottky Emitter
SE, BSE, In-beam SE, In-Beam BSE
• High-vacuum (≤9x10-3Pa) or low-vacuum mode (7-500 Pa)
• Magnification 25 to 1 000 000x
• Acceleration voltage 200 V to 30 kV
• X-Y-Z 130×130×100mm
• Maximum specimen height: 106 mm
Zboncak, M.; Ondreas, F.; Uhlir, V.; Lepcio, P.; Michalicka, J.; Jancar, J., 2020: Translation of segment scale stiffening into macroscale reinforcement in polymer nanocomposites. POLYMER ENGINEERING & SCIENCE 60(3), p. 587 - 596, doi: 10.1002/pen.25317
(MIRA3-XMU, FISCHIONE-TEM MILL)
|Type of microscope||SEM|
|Electron beam source||Schottky FEG cathode|
|Acceleration voltage||200 eV – 30 kV|
50 eV – 30 kV for Beam Deceleration Mode
|Electron beam current||2 pA – 200 nA|
|Magnification||max 1 000 000 x|
|View Field||6,4 mm at WD 10 mm|
Low energy BSE
STEM (transmission mode) s BF, DF
LVSTD (detector SE v Low-vacuum mode)
Resolution in High-vacuum mode
|1.2 nm at 30 kV|
2.5 nm at 3.0 kV
1.0 nm at 30 kV
1.5 nm at 3.0 kV
2.5 nm at 200 V
0.8 nm at 30 kV
|Resolution in Low-vacuum mode||BSE|
|2.0 nm at 30 kV|
1.5 nm at 30 kV
Surface of SDD chipset 20 mm2
<127eV @ Mn Kα
|Observation modes||Resolution, Depth, Field, Wide field, Channeling|
Additional imaging modes
Beam Deceleration Mode (BDM)
|Stage||Standard TESCAN stage|
X, Y = 130 mm (od -65 do +65 mm)
Z = 100 mm
Tilt from -30° to +90°
+TESCAN STEM sample holder (8 samples – standard TEM grids)
|Peltier stage||Diameter of the specimen holder:||12.5 mm|
|Temperature range:||-50 °C to +70 °C |
(High Vacuum Mode)
|Cooling speed:||30 °C/min|
|Temperature accuracy:||±1.2 °C|
|Temperature stability:||±0.2 °C|
Width 290 mm x Depth 340 mm
IR navigation camera
|Vacuum||High-vacuum mode <9·10-3 Pa|
Low-vacuum mode 7–500 Pa
Electron gun pressure <3·10-7 Pa
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