Reactive-ion etching (RIE) is an etching technology used in microfabrication. RIE is a type of dry etching which has different characteristics than wet etching. RIE uses chemically reactive plasma to remove material deposited on wafers. The plasma is generated under low pressure (vacuum) by an electromagnetic field. High-energy ions from the plasma attack the wafer surface and react with it.
A typical (parallel plate) RIE system consists of a cylindrical vacuum chamber, with a wafer platter situated in the bottom portion of the chamber. The wafer platter is electrically isolated from the rest of the chamber. Gas enters through small inlets in the top of the chamber, and exits to the vacuum pump system through the bottom. The types and amount of gas used vary depending upon the etch process; for instance, sulfur hexafluoride is commonly used for etching silicon. Gas pressure is typically maintained in a range between a few millitorr and a few hundred millitorr by adjusting gas flow rates and/or adjusting an exhaust orifice.
|CCP 13.56 MHz at substrate electrode (bias)|
|max. RF power 600 W|
|substrate temperature from – 30 to 80 °C|
|sample size up to 8’’|
|He backside cooling|
|end point detection by optical emission spectroscopy|
|gases:||SF6, Ar, O2, CHF3,CH4/C2H2, NH3, H2, SiH4|
|Materials:||etching of Si, SiO2, Si3N4, TiO2, Au, Nb and deposition of DLC and CN films|