Resist stripper Diener electronic NANO Plasma cleaner

Marek Eliáš

Plasma provides an effective cleaning process without using hazardous solvents. Diener NANO Plasma Cleaner with microwave generator can be used for stripping of the resist. Microwave plasma is ideal for most resist removal in modern device fabrication because it produces a very high concentration of chemically active species along with low energy ion bombardment. Therefore, it guarantees fast ash rate and a damage-free plasma cleaning. Microwave plasma systems are suitable for various substrate technologies like Si, III/V-compounds, quartz, ceramic, lithium niobate, copper interconnect devices etc. Oxygen plasma generates oxygen radicals and O2 ions. It is well suited for the removing of photoresist because oxygen radicals fast etch polymers and organics under formation of CO2 and water (ashing). The samples (max. size 8‘‘) can be heated (up to 1000C) by the chuck in order to ease the stripping of the photoresist.


In biomedical applications, plasma cleaning is useful for achieving compatibility between synthetic biomaterials and natural tissues. Surface modification minimizes adverse reactions such as inflammation, infection, and thrombosis formation.

Cleaning – Metal

MetalAluminiumO20.2 – 0.5 mbar
GoldO2/Ar
Stainless steelO2

Cleaning – Plastic

PlasticABSO20.2 – 0.5 mbar
PA
PE
POM
PP

Cleaning – Other

OtherAl2O3O20.2 – 0.5 mbar
SiO2

Activation

Activation – Metal

MetalAluminiumO20.2 – 0.5 mbar
Gold
O2/Ar
Stainless steelO2

Activation – Plastic

PlasticABSO20.2 – 0.5 mbar
PA
PE
POM
PP

Activation – Other

OtherAl2O3O20.2 – 0.5 mbar
SiO2
Powder

Etching

Etching – Metal

MetalCopperAr0.2 – 0.4 mbar
Iron (Fe, Ni)Ar + O20.2 – 0.5 mbar
SilverAr0.2 – 0.5 mbar

Etching – Plastic

PlasticPPSO20.1 – 0.4 mbar

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