Ultra High Vacuum Preparation and Analytical System - Molecular Beam Epitaxy SPECS (UHV-MBE)

The molecular beam epitaxy preparation chamber (UHV-MBE) is one of the instruments of the UHV-Cluster, which combines preparation and in-situ analysis by several complementary methods for the characterization of surfaces and thin films. It is used exclusively for depositions of III-V materials (Ga, In, Al, As, Sb; C, Si for doping) for epitaxial growth of semiconductor thin films and heterostructures (GaAs, InAs) and nanowires. It is equipped with a RHEED system for real-time layer growth measurement, sample heating by electron beam heater up to 800°C (1200 °C for short time), a pyrometer for temperature measurement, and quartz viewports for attaching an ellipsometer.

Publications:

• NAZZARI, D., GENZER, J., RITTER, V., BETHGE, O., BERTAGNOLLI, E., RAMER, G., LENDL, B., WATANABE, K., TANIGUCHI, T., RURALI, R., KOLÍBAL, M., LUGSTEIN, A., 2021: Highly Biaxially Strained Silicene on Au(111). JOURNAL OF PHYSICAL CHEMISTRY C (WEB) 125(18), p. 9973 - 8, doi: 10.1021/acs.jpcc.0c11033; FULL TEXT
  (UHV-LEEM, UHV-MBE, UHV-DEPOSITION)
• Makoveev, A., 2018: Functional properties of 2D supramolecular nanoarchitectures. TREATISE TO STATE DOCTORAL EXAM , p. 1 - 32
  (UHV-LEEM, UHV-MBE, UHV-XPS, UHV-PREPARATION, UHV-SPM)
• Musálek, T., 2016: Semiconductor nanowire growth utilizing alloyed catalyst. MASTER’S THESIS , p. 1 - 52
  (UHV-MBE, VERIOS, MIRA-EBL, ALD, LYRA)