Sputter deposition is a physical vapor deposition (PVD) method of thin filmdeposition by sputtering. This involves ejecting material from a „target“ that is a source onto a „substrate“ such as a silicon wafer. Resputtering isre-emission of the deposited material during the deposition process by ion oratom bombardment. Sputtered atoms ejected from the target have a wide energydistribution, typically up to tens of eV (100,000 K). The sputtered ions(typically only a small fraction of the ejected particles are ionized – onthe order of 1%) can ballistically fly from the target in straight lines andimpact energetically on the substrates or vacuum chamber (causing resputtering).Alternatively, at higher gas pressures, the ions collide with the gas atoms thatact as a moderator and move diffusively, reaching the substrates or vacuumchamber wall and condensing after undergoing a random walk. The entire rangefrom high-energy ballistic impact to low-energy thermalized motion is accessibleby changing the background gas pressure. The sputtering gas is often an inertgas such as argon. For efficient momentum transfer, the atomic weight of thesputtering gas should be close to the atomic weight of the target, so forsputtering light elements neon is preferable, while for heavy elements kryptonor xenon are used. Reactive gases can also be used to sputter compounds. Thecompound can be formed on the target surface, in-flight or on the substratedepending on the process parameters. The availability of many parameters thatcontrol sputter deposition make it a complex process, but also allow experts alarge degree of control over the growth and microstructure of the film.
|3 DC source , power up to 500W|
|1 RF source , power up to 300W|
|sample size up to 6”|
|rotation of substrate|
|substrate temperature RT – 850 °C|
|gas line for reactive deposition||O2 or N2|
|standart materials:||Au, Ti, Co, Cu, Ni, Si, Al, Ta, Gd, Fe, Ru, W,Ni80Fe20, Ir20Mn80, Fe50Rh50,NiCr, Al2O3, MgO, SiO2, Pa, Co20Fe60B20, Nb, Pt|