High temperature plasma enhanced chemical vapour deposition system on C-based materials Oxford Instruments Plasma Technology NanoFab

Marek Eliáš

chemical vapour deposition system going to very high deposition temperatures dedicated to the deposition of carbon nanomaterials, possibilities of plasma enhancement by discharges of different frequency (including their regular switching)

RF CCP 13.56 MHz plasma source 600 W
high frequency 50–400 kHz plasma source 300 WRF substrate biasing

grounded substrate
sample size up to 6’’
loadlock
substrate temperature 50 to 1000 °C
gases:Ar2, CH4, C2H2, H2
Materialsdeposition of carbon nanotubes and graphene

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