Focused Ion Beam/Scanning Electron Microscope TESCAN LYRA3

Guarantor


Tomáš Šamořil


Description


SEM/FIB is a type of microscope where a focused electron/ion beam is scanned over the sample to generate an image of the surface or to modify it with nanometric resolution (usually better than 10 nm). The image is formed by detecting secondary and backscattered electrons emitted from the impact place of particle beam. The Gas Injection System (GIS) provides a gas inlet for gaseous precursors, thus allowing deposition and enhanced or selective etching on the sample surface using advanced surface chemistry. The microscope is equipped with two closed loop nanomanipulators (optionally two more can be installed), which allows measurement of 2-probe or 4-probe current-voltage characteristics. The tool is equipped with Electron Dispersive X-Ray spectroscopy analyser (EDX) for elemental analysis. Applications include positive/negative lithography, sample imaging and modification, electrical measurements and basic chemical and elemental analysis.

Features

Scanning Electron Microscope with Schottky cathode
Focused Ion Beam column with Ga Liquid – Metal Ion Source with nanometric resolution
Gas Injection System with inlets for up to 5 precursors for deposition and etching of materials
Electron Dispersive X-ray spectroscopy for chemical and elemental analysis
Two fixed closed loop nanomanipulators + additional two sample stage nanomanipulators for electrical measurements
Ready for Transmission Electron Microscopy sample preparation
Electron and Ion Beam Lithography software (milling, etching, deposition)
Integrated controlling software
Active antivibration suspension system
Decontaminator/plas­ma cleaner

Scanning Electron Microscope (SEM)

Tescan LYRA 3FEG
Accelerating voltage200 V – 30 kV, 50 V to 30 kV in Beam Deceleration Mode (BDM)
Probe current2 pA – 200 nA
Detectors / ResolutionSecondary Electrons (SE) / 1.2 nm at 30 kV/ 2.5 nm at 3 kV
SE ( BDM) / 1.5 nm at 3 kV
In-Beam BSE / 2.0 nm at 15 kV
Backscattered Secondary Electrons (BSE) / 2 nm at 30 kV
Transmitted Electrons(TE)
Electron Beam Induced Current (EBIC)
Chamber vacuum< 9e-3 Pa (< 5e-4 Pa reachable)
Specimen Stage MovementsX = 130 mm (–50 mm to +80 mm)
Y = 130 mm (–65 mm to +65 mm)
Z = 100 mm
Rotation: 360° continuous
Tilt: –30° to +90°

Focused Ion Beam (FIB)

Ion ColumnCanion
Ion GunGa Liquid Metal Ion Source
Accelerating voltage0.5 kV to 30 kV
Probe current1 pA to 40 nA
SEM-FIB Coincidence atWD 9 mm for SEM – WD 12 mm for FIB
SEM-FIB angle55°

Gas Injection System (GIS)

Number of GIS channels installed5
Type of precursors availableInsulator (SiOx), Water, Fluorine, Platinum, Tungsten

Energy Dispersive X-ray (EDX) Detector

Detector typeBruker XFlash 5010
Energy resolution≤ 129 eV @ MnKα
59 eV @ FKα
52 eV @ CKα