Atomic layer deposition system Ultratech/CambridgeNanoTech Fiji 200


Marek Eliáš

Atomic Layer Deposition is a deposition technique for very thin layers with the thickness control down to a single atomic layer. It belongs to the CVD techniques family. The thickness precision is achieved by pulsed deposition, where first a metal-containing precursor is introduced into the chamber and after a short time (allowing for a monolayer adsorption) the chamber is pumped down. Following step is an exposure to the oxidizing precursor (for oxides) or nitrogen containing precursor (for nitrides). Thus, a monolayer of target material is grown. The metal-containing precursors are usually organometallic ones, for oxidation a water or oxygen plasma can be used, nitridation is done using water or nitrogen plasma. To achieve the deposition in the ALD mode, sample is heated up to a certain temperature, for most processes being in the range from 150 to 300 °C.

thermal deposition within range RT-500 °C
sample size up to 8"
4 precursor lines, with possible upgrade to 6
plasma enhanced deposition (4 plasma gas lines)
expo mode for homogenous deposition on high-aspect-ratio nanostructures
controling software allows preparation/mo­dification/sto­rage of individual recipes
fully automatic programmable operation
Standard materialsLa2O3, Al2O3, HfO2, TiO2, SiO2

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